smbyw04-200 byw4200b ? october 1999 - ed: 4c high efficiency fast recovery diode i f(av) 4 a v rrm 200 v v f (max) 0.85 v tj (max) 150 c main product characteristics suited to smps and drives surface mount package very low forward losses negligible switching losses high surge current capability features and benefits single chip rectifier suited to switch mode power supplies and high frequency converters. packaged in dpak and smc, this surface mount device is intended for use in low voltage, high frequency inverters, free wheeling and rectification applications. description dpak byw4200b 4 1(nc) 2 3 symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i f(rms) rms forward current 10 a i f(av) average forward current d = 0.5 dpak smc tcase = 130c tlead = 70c 4a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 70 a tstg storage temperature range - 65 to + 150 c tj maximum operating junction temperature 150 c absolute ratings (limiting values) 2 4(tab) 3 smc (jedec do-214ab) smbyw04-200 1/6 obsolete product(s) - obsolete product(s)
symbol parameter package value unit r th (j-c) junction to case dpak 5 c/w r th (j-l) junction to leads smc 20 c/w thermal resistance symbol tests conditions tests conditions min. typ. max. unit i r * reverse leakage current tj = 25 cv r = v rrm 10 m a tj = 100 c 0.15 0.5 ma v f ** forward voltage drop tj = 25 ci f = 12 a 1.25 v tj = 100 ci f = 4 a 0.8 0.85 static electrical characteristics pulse test : * tp = 5 ms, d < 2 % ** tp = 380 m s, d < 2% to evaluate the maximum conduction losses use the following equation : p = 0.7 x i f(av) + 0.037 i f 2 (rms) symbol test conditions min. typ. max. unit t rr tj = 25c i f = 1a v f = 30v di f /dt = -50 a/ m s2635ns t fr tj = 25c i f = 4a v fr = 1.1 x v f max di f /dt = -50 a/ m s20 ns v fp tj = 25c i f = 4a di f /dt = -50 a/ m s5 v recovery characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 pf(av)(w) d = 0.2 d = 0.5 d = 1 d = 0.05 d = 0.1 if(av) (a) t d =tp/t tp fig. 1: average forward power dissipation versus average forward current. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 2 4 6 8 10 12 14 16 18 20 im(a) p=1.0w p=1.5w p=2.0w p=2.5w t d =tp/t tp d fig. 2: peak current versus form factor. smbyw04-200 / byw4200b 2/6 obsolete product(s) - obsolete product(s)
1e-3 1e-2 1e-1 1e+0 0.1 0.2 0.5 1.0 zth(j-c)/rth(j-c) t d =tp/t tp d = 0.1 d = 0.2 d = 0.5 single pulse tp(s) fig. 6-2: variation of thermal impedance junction to case versus pulse duration (byw4200b). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 70.0 ifm(a) tj=25c tj=100c (typical values) tj=100c vfm(v) fig. 4: forward voltage drop versus forward current (maximum values). 1e-3 1e-2 1e-1 1e+0 0 5 10 15 20 25 30 35 40 45 50 im(a) tc=125c tc=75c i m t d =0.5 t(s) fig. 5-2: non repetitive surge peak forward current versus overload duration (byw4200b). 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.10 1.00 zth(j-a)/rth(j-a) t d =tp/t tp d = 0.1 d = 0.2 d = 0.5 single pulse tp(s) fig. 6-1: variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, epoxy fr4, e(cu)=35 m m) (smbyw04-200). 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 if(av)(a) rth(j-a)=75c/w rth(j-a)=rth(j-l) dpak rth(j-a)=rth(j-c) smc tamb(c) t d =tp/t tp fig. 3: average forward current versus ambient temperature ( d =0.5). 1e-3 1e-2 1e-1 1e+0 2 4 6 8 10 12 im(a) ta=25c ta=50c i m t d =0.5 t(s) fig. 5-1: non repetitive surge peak forward current versus overload duration (smbyw04-200). smbyw04-200 / byw4200b 3/6 obsolete product(s) - obsolete product(s)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 10 20 30 40 50 60 70 80 90 100 rth(j-a) (c/w) s(cu) (cm2) fig. 11-1: thermal resistance junction to ambient versus copper surface under each lead (epoxy printed circuit board fr4, copper thickness: 35mm) (smbyw04-200). 0 2 4 6 8 101214161820 0 10 20 30 40 50 60 70 80 90 100 rth(j-a) (c/w) s(cu) (cm2) fig. 11-2: thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board fr4, copper thickness: 35mm) (byw4200b). 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 irm(a) if=if(av) 90% confidence tj=25c tj=100c dif/dt(a/s) fig. 7: reverse recovery current versus di f /dt. 25 50 75 100 125 150 100 150 200 250 % irm qrr trr if=4a dif/dt=50a/s vr=30v tj(c) fig. 10: dynamic parameters versus junction temperature. 1 10 100 200 10 20 50 100 c(pf) f=1mhz tj=25c vr(v) fig. 9: junction capacitance versus reverse voltage applied (typical values). 1 10 100 0 10 20 30 40 50 60 70 80 90 100 trr(ns) if=if(av) 90% confidence tj=25c tj=100c dif/dt(a/s) fig. 8: reverse recovery time versus di f /dt. smbyw04-200 / byw4200b 4/6 obsolete product(s) - obsolete product(s)
foot print (in millimeters) 6.7 6.7 3 3 1.6 1.6 2.3 2.3 package mechanical data dpak ref. dimensions millimeters inches min. max min. max. a 2.20 2.40 0.086 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.212 c 0.45 0.60 0.017 0.023 c2 0.48 0.60 0.018 0.023 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.251 0.259 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.397 l2 0.80 typ. 0.031 typ. l4 0.60 1.00 0.023 0.039 v2 0 8 0 8 smbyw04-200 / byw4200b 5/6 obsolete product(s) - obsolete product(s)
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com ordering code marking package weight base qty delivery mode smbyw04-200 d20 smc 0.243g 2500 tape and reel byw4200b w4200 dpak 0.30g 75 tube byw4200b-rl w4200 dpak 0.30g 2500 tape and reel epoxy meets ul 94,v0 band indicates cathode package mechanical data smc e c l e2 e1 d a1 a2 b ref. dimensions millimeters inches min. max. min. max. a1 1.90 2.45 0.075 0.096 a2 0.05 0.20 0.002 0.008 b 2.90 3.2 0.114 0.126 c 0.15 0.41 0.006 0.016 e 7.75 8.15 0.305 0.321 e1 6.60 7.15 0.260 0.281 e2 4.40 4.70 0.173 0.185 d 5.55 6.25 0.218 0.246 l 0.75 1.60 0.030 0.063 foot print (in millimeters) 2.0 4.2 2.0 3.3 smbyw04-200 / byw4200b 6/6 obsolete product(s) - obsolete product(s)
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